As (Senior/Principal) Product Engineer, you will join Nexperia's talented and ambitious GaN R&D team, directly contributing to our ability to successfully produce GaN devices. This is your new job:
1. Demonstrate proficiency in electrical results analysis (parametric probe, final tests data).
2. Build dashboards to map out yield across the supply chain.
3. Perform yield analysis and oversee lots disposition work.
4. Lead failure investigations for low yield with stakeholders.
5. Drive yield improvement and cost reduction activities.
This is you:
1. Minimum Masters Degree or equivalent in Experimental Physics, Electronics Engineering, or a similar discipline, PhD preferred.
2. Understanding of power semiconductor devices, ideally wide band gap GaN HEMTs.
3. Industrial experience in yield or product engineering highly desirable.
4. Ability to communicate complex concepts and requirements clearly and to influence stakeholders at all levels.
This is what Nexperia offers:
1. Remuneration & Reward: Competitive base salary, Annual Incentive Plan, excellent contributory pension scheme, recognition rewards scheme, income protection, 12 x salary life assurance, visa sponsorship, and relocation assistance.
2. Health & Wellbeing: Hybrid working policy, 33 days annual leave including bank holidays, flexible benefits scheme, enhanced sick pay, on-site medical centre, subsidised canteen, employee assistance programme, retail and entertainment reductions, time off for charitable giving, and a variety of sports and social clubs.
3. Professional Development: Possibility for funded academic support up to PhD level, employee goal setting and development plans, huge growth potential both internally and globally within the business, the opportunity to contribute and work with cutting-edge technologies.
4. Diversity, Equity, and Inclusion: Corporate members of Neurodiversity in Business, Disability Confident Employer, dedicated Employee Resource Groups for Women and Neuroinclusion, commitment to increase women in management positions to 30% by 2030.
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