A highly successful company supplying the cellular industry has a requirement for a Senior RF IC Design Power Amplifier Engineer based at their design center in Andover, Massachusetts, USA.
In this role, the Senior RF IC Design Engineer will lead RF IC Designs for wireless communications and will be involved in the design of power amplifiers, switches, and low noise amplifiers for WLAN using BiCMOS, which is essential to this role. SiGe HBT, GaAs, and GaN experience is also advantageous.
You will perform detailed circuit design and simulation, driving detailed IC layout, lab evaluation, and backfitting of designs.
Experience is required in RF IC Design, specifically in PA (power amplifier) design and systems architecture in the multi-GHz frequency range. The successful applicant will have at least 8 years of experience in a similar role, including experience in switches and LNA circuits, Agilent ADS, GoldenGate, and Cadence Virtuoso design tools. Knowledge in ESD protection techniques, bias and detector circuit design, and filter/matching design techniques is ideal.
You will work with IC layout and lab evaluation teams and will be responsible for giving technical presentations and data summaries. Experience with RF test and measurement equipment and an understanding of WiFi technology is ideal.
You will be an excellent communicator with a proven history of delivering production products and familiarity with all stages of the product lifecycle, able to generate clear technical presentations.
It is not possible to sponsor a working visa for this position, so the successful applicant must have permission to work in the United States of America.
Contact Leon from IC Resources today to apply.
#J-18808-Ljbffr