Join our team as a Research Fellow in the School of Engineering at the University of Warwick, contributing to cutting-edge projects in semiconductor research.
This fixed-term postdoctoral role is funded by two major initiatives: the “AdvanSiC - Advances in Cost-Effective HV SiC Power Devices for Europe’s Medium Voltage Grids” project, running until December 2025, and the Japan-UK collaborative project “UP-SiC: Unlocking the Potential of Silicon Carbide in Power Electronics,” continuing through June 2028.
Under the guidance of Dr. Marina Antoniou, you will play a pivotal role in designing and fabricating silicon carbide (SiC) devices, focusing on innovative SJ and 3D device designs for 1.2kV and 3.3kV applications. You will contribute to developing advanced semiconductor fabrication techniques, TCAD-based device design, and modelling, while collaborating with experts in material growth, SiC device design, and fabrication. Additionally, you’ll mentor a new PhD student and support broader group projects.
The goal is to pioneer cost-effective power semiconductor devices that push the boundaries of energy efficiency through high-performance SiC-MOSFET technology. You’ll work with state-of-the-art laboratories and TCAD servers at Warwick and other partner facilities, designing and executing experiments that aim to deliver breakthrough platforms for high-density 1.2kV and 3.3kV rated devices.
This position is based at the University of Warwick, with occasional travel to collaborate with partners and access specialist research facilities. There are also opportunities to present your findings at international conferences. Strong research publication skills and the ability to handle any administrative or project management tasks that arise are essential.
We will consider applications for employment on a part-time or other flexible working basis, even where a position is advertised as full-time, unless there are operational or other objective reasons why it is not possible to do so.